Abstract
The relaxation of a silicon defect subsystem modified by the implantation of high-energy heavy ions was studied by varying the electrical properties of irradiated Si crystal annealed at a temperature of 450°C. It is shown that quenched-in acceptors are introduced into Si crystals as a result of irradiation with comparatively low doses of Bi ions and subsequent relatively short annealing (no longer than 5 h); the distribution of these quenched-in acceptors has two peaks located at a depth of about 10 µm and at a depth corresponding approximately to the ions’ projected range (43.5 µm). The peaks in the distribution of quenched-in acceptors correspond to the regions enriched with vacancy-containing defects. As the heat-treatment duration increases, the acceptor centers are transformed into donor centers with the centers’ spatial distribution remaining intact. Simultaneously, an almost uniform introduction of quenched-in donors occurs in the entire crystal beyond the depth corresponding to the projected range of ions.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 37, No. 5, 2003, pp. 565–569.
Original Russian Text Copyright © 2003 by Smagulova, Antonova, Neustroev, Skuratov.
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Smagulova, S.A., Antonova, I.V., Neustroev, E.P. et al. Relaxation of a defect subsystem in silicon irradiated with high-energy heavy ions. Semiconductors 37, 546–550 (2003). https://doi.org/10.1134/1.1575358
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DOI: https://doi.org/10.1134/1.1575358