Abstract
Separate confinement InGaAsP/InP laser heterostructures were grown by metalorganic-hydride vapor-phase epitaxy. High-power single-mode laser diodes of mesastripe design based on these heterostructures operate in a wavelength interval of 1.7–1.8 μm with a maximum continuous room temperature output power of 150 mW. The single-mode lasing regime is maintained up to an output power level of 100 mW.
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 29, No. 7, 2003, pp. 55–63.
Original Russian Text Copyright © 2003 by Lyutetski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \), Pikhtin, Slipchenko, Fetisova, Leshko, Golikova, Ryaboshtan, Tarasov.
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Lyutetskii, A.V., Pikhtin, N.A., Slipchenko, S.O. et al. High-power 1.7–1.8 μm single-mode laser diodes. Tech. Phys. Lett. 29, 290–293 (2003). https://doi.org/10.1134/1.1573294
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DOI: https://doi.org/10.1134/1.1573294