Abstract
The conditions for autooscillations in a semiconductor possessing an S-shaped current-voltage characteristic are considered. The period and amplitude of autooscillations are expressed as functions of the semiconductor bandgap width and the ratios of the characteristic times of the charge and inductance accumulation to that of the heat exchange with the ambient medium.
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A. V. Melkikh, A. A. Povzner, A. G. Andreeva, and I. N. Sachkov, Pis’ma Zh. Tekh. Fiz. 27(6), 19 (2001) [Tech. Phys. Lett. 27, 226 (2001)].
A. V. Melkikh and A. A. Povzner, Zh. Tekh. Fiz. 72(7), 141 (2002) [Tech. Phys. 47, 932 (2002)].
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 29, No. 6, 2003, pp. 14–18.
Original Russian Text Copyright © 2003 by Melkikh, Povzner.
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Melkikh, A.V., Povzner, A.A. Autooscillations under self-heating conditions in a semiconductor. Tech. Phys. Lett. 29, 224–225 (2003). https://doi.org/10.1134/1.1565640
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DOI: https://doi.org/10.1134/1.1565640