Abstract
The effect of laser irradiation with hν=1.96 eV (λ=0.63 µm) on the properties of titanium-silicon contacts subjected to steady-state thermal annealing in a nitrogen atmosphere is studied. It is found that treatment-induced changes in the phase composition of the contact modify its electrophysical parameters. The applicability of laser irradiation to the formation of rectifying titanium-silicon junctions with desired parameters is demonstrated.
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Translated from Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\) Fiziki, Vol. 73, No. 2, 2003, pp. 125–128.
Original Russian Text Copyright © 2003 by Nuprienok, Shibko
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Nuprienok, I.S., Shibko, A.N. Influence of laser irradiation with hν=1.96 eV on the properties of titanium-silicon contact under thermal annealing in nitrogen. Tech. Phys. 48, 257–260 (2003). https://doi.org/10.1134/1.1553570
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DOI: https://doi.org/10.1134/1.1553570