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Room-temperature photoluminescence at 1.55 μm from heterostructures with InAs/InGaAsN quantum dots on GaAs substrates

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Abstract

Room-temperature photoluminescence (PL) at 1.55 μm from heterostructures with InAs/InGaAsN quantum dots (QDs) grown by MBE on GaAs substrates is demonstrated for the first time. The effect of nitrogen incorporated into InAs/InGaAsN QDs on the PL wavelength and intensity was studied. The integral intensity of PL from the new structure with InAs/(In)GaAsN QDs is comparable to that from a structure with InGaAsN quantum wells emitting at 1.3 μm.

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    V. A. Odnoblyudov, A. Yu. Egorov, N. V. Kryzhanovskaya, A. G. Gladyshev, V. V. Mamutin, A. F. Tsatsul’nikov & V. M. Ustinov

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  1. V. A. Odnoblyudov
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  2. A. Yu. Egorov
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  3. N. V. Kryzhanovskaya
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  4. A. G. Gladyshev
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  5. V. V. Mamutin
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  6. A. F. Tsatsul’nikov
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  7. V. M. Ustinov
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 28, No. 22, 2002, pp. 82–88.

Original Russian Text Copyright © 2002 by Odnoblyudov, Egorov, Kryzhanovskaya, Gladyshev, Mamutin, Tsatsul’nikov, Ustinov.

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Odnoblyudov, V.A., Egorov, A.Y., Kryzhanovskaya, N.V. et al. Room-temperature photoluminescence at 1.55 μm from heterostructures with InAs/InGaAsN quantum dots on GaAs substrates. Tech. Phys. Lett. 28, 964–966 (2002). https://doi.org/10.1134/1.1526898

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  • DOI: https://doi.org/10.1134/1.1526898

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