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Spatiotemporal structures in a transversely extended semiconductor system

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Abstract

A semiconductor system with an N-shaped current-voltage characteristic can generate nonstationary structures that are inhomogeneous in the direction transverse to the current flow. In samples of semiinsulating GaAs with a large cross section, this effect is explained by a loss of stability of the regime of uniform domain motion.

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    Yu. A. Astrov

  2. Institute of Applied Physics, Münster University, 48149, Münster, Germany

    H. -G. Purwins

Authors
  1. Yu. A. Astrov
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  2. H. -G. Purwins
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 28, No. 21, 2002, pp. 62–67.

Original Russian Text Copyright © 2002 by Astrov, Purwins.

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Astrov, Y.A., Purwins, H.G. Spatiotemporal structures in a transversely extended semiconductor system. Tech. Phys. Lett. 28, 910–912 (2002). https://doi.org/10.1134/1.1526880

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  • DOI: https://doi.org/10.1134/1.1526880

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