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Multivalent substitution in a quasi-binary Ga1−x (II-Mn-IV)xAs solid solution

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Abstract

A process of the multivalent substitution of Mn atoms for cations in Ga1−x MnxAs (a base material) is proposed. According to this approach, the two-cation ternary compound with a chalcopyrite structure is used as a component forming a solid solution with GaAs. Based on the successful prediction and growth of high-temperature chalcopyrite ferromagnets, it is expected that the content of Mn in Ga1−x MnxAs can be increased. Quasi-binary (GaAs)1−x (ZnGeAs2)x:Mn and (GaAs1−x (CdSiAs2)x:Mn solid solutions are considered as candidate materials possessing higher Curie temperatures as compared to that of Ga1−x MnxAs.

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    G. A. Medvedkin

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  1. G. A. Medvedkin
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 28, No. 21, 2002, pp. 22–28.

Original Russian Text Copyright © 2002 by Medvedkin.

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Medvedkin, G.A. Multivalent substitution in a quasi-binary Ga1−x (II-Mn-IV)xAs solid solution. Tech. Phys. Lett. 28, 889–892 (2002). https://doi.org/10.1134/1.1526873

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