Abstract
The effect of ultrasonic waves on the spectral coefficient of radiation reflection from the surface of semiconductors used in solar energy converters is considered. A change in the reflectance of semiconductors before and after ultrasonic treatment is determined. It is shown that acoustic stimulation of the semiconductor surface and subsurface layers determines the radiation reflection conditions.
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 28, No. 18, 2002, pp. 1–12.
Original Russian Text Copyright © 2002 by Zaveryukhin, Zaveryukhina, Tursunkulov.
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Zaveryukhin, B.N., Zaveryukhina, N.N. & Tursunkulov, O.M. Variation of the reflection coefficient of semiconductors in a wavelength range from 0.2 to 20 μm under the action of ultrasonic waves. Tech. Phys. Lett. 28, 752–756 (2002). https://doi.org/10.1134/1.1511774
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DOI: https://doi.org/10.1134/1.1511774