Abstract
The structures comprising three epitaxial InP layers—buffer (n ++), active (n), and contact (n +)—were grown by liquid phase epitaxy on porous and compact (control) InP(100) substrates. High quality of the active n-InP layer obtained on a porous substrate (in comparison to the control samples) is confirmed by the values of the halfwidths of the (311) X-ray diffraction reflections (54″ versus 76″), dislocation concentration (5×102−5×103 cm−2 versus 5×104−5×105 cm−2), and electron mobility (4000 cm2/V s versus 3000–3500 cm2/V s). Using these homoepitaxial InP structures, Au-Ti Schottky diodes with a working mesastructure area of ∼1.8¢10−6 cm2 were prepared. It was found that diodes based on the porous substrates are characterized by significantly smaller leak currents and higher breakdown voltages as compared to those of the control diodes: 1 nA, 27 V versus 200 nA, 15 V.
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References
E. F. Venger, R. V. Konakova, G. S. Korotchenkov, V. V. Mileni, É. V. Russu, and I. V. Prokopenko, Interphase Interactions and Degradation Mechanisms in Metal-InP and Metall-GaAs Structures (Inst. Fiz. Poluprovodn. Nats. Akad. Nauk Ukr., Kiev, 1999).
S. Luryi and E. Suhir, Appl. Phys. Lett. 49, 140 (1986).
V. V. Mamutin, V. P. Ulin, V. V. Tret’yakov, et al., Pis’ma Zh. Tekh. Fiz. 25(1), 3 (1999) [Tech. Phys. Lett. 25, 1 (1999)].
F. Yu. Soldatenko, V. P. Ulin, A. A. Yakovenko, et al., Pis’ma Zh. Tekh. Fiz. 25(21), 15 (1999) [Tech. Phys. Lett. 25, 852 (1999)].
A. V. Bobyl’, G. D. Varenko, S. A. Evdokimov, et al., in Reviews on Electron Technology, Series 8 (TsNII “Élektronika,” Moscow, 1990), No. 1 (1572).
H. Fujikura, A. Liu, A. Hamamatsu, et al., Jpn. J. Appl. Phys. 39, 4616 (2000).
A. Liu and C. Duan, Appl. Phys. Lett. 78, 43 (2001).
A. V. Bobyl, M. E. Gaevskii, S. F. Karmanenko, et al., J. Appl. Phys. 82, 1274 (1997).
A. V. Bobyl, R. N. Kyutt, and V. V. Tret’yakov, Semicond. Sci. Technol. 14, 589 (1999).
Zh. I. Alferov, I. N. Arsent’ev, L. S. Vavilova, et al., Fiz. Tekh. Poluprovodn. (Leningrad) 19(6), 1115 (1985) [Sov. Phys. Semicond. 19, 683 (1985)].
S. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981; Mir, Moscow, 1984), Vol. 1.
C.-W. Kao and C. R. Crowell, Solid-State Electron. 23(8), 881 (1980).
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 28, No. 17, 2002, pp. 57–66.
Original Russian Text Copyright © 2002 by Arsent’ev, Ba\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \)dakova, Bobyl’, Vavilova, Konnikov, Ulin, Boltovets, Konakova, Milenin, Vo\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \)tsikhovski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \).
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Arsent’ev, I.N., Baidakova, M.V., Bobyl’, A.V. et al. Structural and electrical characteristics of epitaxial InP layers on porous substrates and the parameters of related Au-Ti Schottky barriers. Tech. Phys. Lett. 28, 735–739 (2002). https://doi.org/10.1134/1.1511769
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DOI: https://doi.org/10.1134/1.1511769