Abstract
In the framework of perturbation theory, the first several one-particle energies and wave functions for electrons and holes (six for each) in spherical silicon quantum dots are obtained in the envelope function approximation (kp method). It is shown that the model of an isotropic dispersion relation with the mean reciprocal effective mass is applicable for the ground state of holes in the valence band. Anisotropy of the dispersion relation, which takes place for bulk semiconductors, becomes significant for the electron ground state in the conduction band as well as for all excited (both electron and hole) states.
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Translated from Zhurnal Éksperimental’no\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\) i Teoretichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\) Fiziki, Vol. 121, No. 2, 2002, pp. 480–488.
Original Russian Text Copyright © 2002 by Burdov.
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Burdov, V.A. Electron and hole spectra of silicon quantum dots. J. Exp. Theor. Phys. 94, 411–418 (2002). https://doi.org/10.1134/1.1458492
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DOI: https://doi.org/10.1134/1.1458492