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1.55–1.6 μm electroluminescence of GaAs based diode structures with quantum dots

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Abstract

Laser diode structures on GaAs substrates with an active region employing laterally associated InAs quantum dots obtained by low-temperature MBE exhibit electroluminescence at a wavelength of 1.55–1.6 μm in a temperature range from 20 to 260 K.

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    A. E. Zhukov, B. V. Volovik, S. S. Mikhrin, N. A. Maleev, A. F. Tsatsul’nikov, E. V. Nikitina, I. N. Kayander, V. M. Ustinov & N. N. Ledentsov

Authors
  1. A. E. Zhukov
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  2. B. V. Volovik
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  3. S. S. Mikhrin
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  4. N. A. Maleev
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  5. A. F. Tsatsul’nikov
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  6. E. V. Nikitina
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  7. I. N. Kayander
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  8. V. M. Ustinov
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  9. N. N. Ledentsov
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Translated from Pis’ma v Zhurnal Tekhnichesko\(j_k \sim 1/\sqrt[4]{\tau }\) Fiziki, Vol. 27, No. 17, 2001, pp. 51–56.

Original Russian Text Copyright © 2001 by Zhukov, Volovik, Mikhrin, Maleev, Tsatsul’nikov, Nikitina, Kayander, Ustinov, Ledentsov.

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Zhukov, A.E., Volovik, B.V., Mikhrin, S.S. et al. 1.55–1.6 μm electroluminescence of GaAs based diode structures with quantum dots. Tech. Phys. Lett. 27, 734–736 (2001). https://doi.org/10.1134/1.1405243

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  • DOI: https://doi.org/10.1134/1.1405243

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