Skip to main content
SpringerLink
Log in

Spatial separation of electrons in Ge/Si(001) heterostructures with quantum dots

  • Condensed Matter
  • Published:
Journal of Experimental and Theoretical Physics Letters Aims and scope Submit manuscript

Abstract

It is shown experimentally that the excitation of interband optical transitions in arrays of Ge/n-Si(001) quantum dots leads to a decrease in the concentration of electrons in the conduction band. The phenomenon observed is due to the formation of negatively charged exciton complexes in Ge islands and represents the first experimental confirmation of the spatial separation of electrons in the silicon matrix surrounding the islands.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. O. P. Pchelyakov, Yu. B. Bolkhovityanov, A. V. Dvurechenskii, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 34, 1281 (2000) [Semiconductors 34, 1229 (2000)].

    Google Scholar 

  2. Zh. I. Alferov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 32, 3 (1998) [Semiconductors 32, 1 (1998)].

    Google Scholar 

  3. A. I. Yakimov, N. P. Stepina, A. V. Dvurechenskii, et al., Phys. Rev. B 63, 45312 (2001).

    Google Scholar 

  4. A. I. Yakimov, N. P. Stepina, A. V. Dvurechenskii, et al., Semicond. Sci. Technol. 15, 1125 (2000).

    Article  ADS  Google Scholar 

  5. B. I. Shklovskii and A. L. Éfros, Electronic Properties of Doped Semiconductors (Nauka, Moscow, 1979; Springer-Verlag, New York, 1984).

    Google Scholar 

  6. A. I. Yakimov, A. V. Dvurechenskii, A. I. Nikiforov, et al., Phys. Rev. B 62, R16283 (2000).

  7. V. G. Kustov, Fiz. Tekh. Poluprovodn. (Leningrad) 10, 2215 (1976) [Sov. Phys. Semicond. 10, 1318 (1976)].

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090, Russia

    A. I. Yakimov, A. V. Dvurechenskii & A. I. Nikiforov

Authors
  1. A. I. Yakimov
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. A. V. Dvurechenskii
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. A. I. Nikiforov
    View author publications

    You can also search for this author in PubMed Google Scholar

Additional information

__________

Translated from Pis’ma v Zhurnal Éksperimental’no\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) i Teoretichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 73, No. 10, 2001, pp. 598–600.

Original Russian Text Copyright © 2001 by Yakimov, Dvurechenski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \), Nikiforov.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Yakimov, A.I., Dvurechenskii, A.V. & Nikiforov, A.I. Spatial separation of electrons in Ge/Si(001) heterostructures with quantum dots. Jetp Lett. 73, 529–531 (2001). https://doi.org/10.1134/1.1387520

Download citation

  • Received:

  • Issue Date:

  • DOI: https://doi.org/10.1134/1.1387520

PACS numbers

Search

Navigation