Abstract
Prior to depositing thin metal sulfide films by spraying aqueous solutions of thiocarbamide complexes of the corresponding metals onto heated silicon substrates, the semiconductor substrates were subjected to a pulsed magnetic field treatment. This additional processing considerably decreases hydrophobicity of the silicon wafer surface, thus favoring the subsequent formation of high-quality homogeneous sulfide films with good adhesion to the substrate.
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 27, No. 7, 2001, pp. 35–39.
Original Russian Text Copyright © 2001 by Levin, Semenov, Naumov.
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Levin, M.N., Semenov, V.N. & Naumov, A.V. Pulsed magnetic field processing of silicon substrates prior to thermal spray film deposition. Tech. Phys. Lett. 27, 279–280 (2001). https://doi.org/10.1134/1.1370200
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DOI: https://doi.org/10.1134/1.1370200