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The effect of adsorption complexes on the electron spectrum and luminescence of porous silicon

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Abstract

Effects of the surface atomic structures on the electron spectrum and luminescent properties of porous silicon (por-Si) were studied by methods of photoluminescence spectroscopy, UV photoelectron spectroscopy, and Fourier-transform IR spectroscopy. An analysis of evolution of the por-Si characteristics in the course of thermal treatment in vacuum revealed a correlation between the photoluminescence spectrum and intensity, on the one hand, and the electron spectrum and surface atomic structure, on the other hand. The thermodesorption of adsorbate from por-Si leads to atomic rearrangements on the sample surface, which is accompanied by changes in the electron structure and, hence, in the luminescent properties of the material.

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Authors and Affiliations

  1. Institute of Physics, St. Petersburg State University, St. Petersburg, 199164, Russia

    A. A. Lisachenko & A. M. Aprelev

Authors
  1. A. A. Lisachenko
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  2. A. M. Aprelev
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 27, No. 4, 2001, pp. 4–11.

Original Russian Text Copyright © 2001 by Lisachenko, Aprelev.

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Lisachenko, A.A., Aprelev, A.M. The effect of adsorption complexes on the electron spectrum and luminescence of porous silicon. Tech. Phys. Lett. 27, 134–137 (2001). https://doi.org/10.1134/1.1352772

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  • DOI: https://doi.org/10.1134/1.1352772

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