Abstract
It is demonstrated that a gas discharge can be localized between separate elements on the surface of electrodes with a preset geometry. The main characteristics of the localized discharge have been studied and the forms of this discharges are established. Using the localized discharge in a fluorine-containing gas medium, size-controlled etching of silicon and silicon dioxide with a resolution of 100 μm was performed without mask application.
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 27, No. 3, 2001, pp. 45–48.
Original Russian Text Copyright © 2001 by Abramov, Abramova, Surovtsev.
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Abramov, A.V., Abramova, E.A. & Surovtsev, I.S. The localized gas discharge etching of materials. Tech. Phys. Lett. 27, 108–109 (2001). https://doi.org/10.1134/1.1352762
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DOI: https://doi.org/10.1134/1.1352762