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Porous Silicon Formation by Galvanic Etching

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Handbook of Porous Silicon

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Abstract

Galvanic etching of silicon is reviewed. Galvanic etching is an anodic process that occurs at open circuit. It results from the exposure of a metal contact on a semiconductor surface to an appropriate solution. It can be performed in either acidic or alkaline solutions and can be used to form porous layers or for complete removal of a region of semiconductor. Recently it has found particular application to form combustible layers, which act as high-density energy sources for micromechanical systems. Galvanic etching has also been used in the fabrication of membranes, freestanding beams, and MEMS.

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References

  • Abraham A, Piekiel NW, Morris CJ, Dreizin EL (2016) Combustion of energetic porous silicon composites containing different oxidizers. Propellants Explos Pyrotechnics 41:179–188

    Article  CAS  Google Scholar 

  • Allongue P, Maroun F (2006) Metal electrodeposition on single crystal metal surfaces: mechanisms, structure and applications. Curr Opin Solid State Mater Sci 10:173–181

    Article  CAS  Google Scholar 

  • Archer RJ (1960) Stain films on silicon. J Phys Chem Solid 14:104–110

    Article  CAS  Google Scholar 

  • Ashruf CMA, French PJ, Bressers PMMC, Sarro PM, Kelly JJ (1998) A new contactless electrochemical etch-stop based on a gold/silicon/TMAH galvanic cell. Sens Actuators A 66:284–291

    Article  CAS  Google Scholar 

  • Ashruf CMA, French PJ, Bressers PMMC, Kelly JJ (1999) Galvanic porous silicon formation without external contacts. Sens Actuators A 74:118–122

    Article  CAS  Google Scholar 

  • Ashruf CMA, French PJ, Sarro PM, Kazinczi R, Xia XH, Kelly JJ (2000) Galvanic etching for sensor fabrication. J Micromech Microeng 10:505–515

    Article  CAS  Google Scholar 

  • Balderas-Valadez RF, Agarwal V, Pacholski C (2016) Fabrication of porous silicon-based optical sensors using metal-assisted chemical etching. RSC Adv 6:21430–21434

    Article  CAS  Google Scholar 

  • Becker CR, Currano LJ, Churaman WA, Stoldt CR (2010a) Thermal analysis of the exothermic reaction between galvanic porous silicon and sodium perchlorate. ACS Appl Mater Interfaces 2:2998–3003

    Article  CAS  Google Scholar 

  • Becker CR, Miller DC, Stoldt CR (2010) Galvanically coupled gold/silicon-on-insulator microstructures in hydrofluoric acid electrolytes: finite element simulation and morphological analysis of electrochemical corrosion. J Micromech Microeng 20:085017

    Article  CAS  Google Scholar 

  • Becker CR, Apperson S, Morris CJ, Gangopadhyay S, Currano LJ, Churaman WA, Stoldt CR (2011) Galvanic porous silicon composites for high-velocity nanoenergetics. Nano Lett 11:803–807

    Article  CAS  Google Scholar 

  • Becker CR, Gillen GJ, Staymates ME, Stoldt CR (2015) Nanoporous silicon combustion: observation of shock wave and flame synthesis of nano-particle silica. ACS Appl Mater Interfaces 7:25539–25545

    Article  CAS  Google Scholar 

  • Bressers PMMC, Plakman M, Kelly JJ (1996) Etching and electrochemistry of silicon in acidic bromine solutions. J Electroanal Chem 406:131–137

    Article  Google Scholar 

  • Broas M, Liu X, Ge Y, Mattila TT, Paulasto-Krockel M (2015) Galvanic corrosion of structural non-stoichiometric silicon nitride thin films and its implications on reliability of microelectromechanical devices. J Appl Phys 117:245304

    Article  CAS  Google Scholar 

  • Carraro C, Maboudian R, Magagnin L (2007) Metallization and nanostructuring of semiconductor surfaces by galvanic displacement processes. Surf Sci Rep 62:499–525

    Article  CAS  Google Scholar 

  • Chabal YJ, Harris AL, Raghavachari K, Tully JC (1993) Infrared spectroscopy of H-terminated silicon surfaces. Internat J Mod Phys B 7:1031–1078

    Article  CAS  Google Scholar 

  • Chasiotis I, Knauss WG (2003) The mechanical strength of polysilicon films: part 1. The influence of fabrication governed surface conditions. J Mech Phys Solids 51:1533–1550

    Article  CAS  Google Scholar 

  • Chattopadhyay S, Li X, Bohn PW (2002) In-plane control of morphology and tunable photoluminescence in porous silicon produced by metal-assisted electroless chemical etching. J Appl Phys 91:6134–6140

    Article  CAS  Google Scholar 

  • Chiappini C (2014) MACE silicon nanostructures. In: Canham LT (ed) Handbook of porous silicon, 1st edn. Springer Verlag, Berlin, pp 171–186

    Google Scholar 

  • Churaman WA, Morris CJ, Ramachandran R, Bergbreiter S (2015) The effect of porosity on energetic porous silicon solid propellant micro-propulsion. J Micromech Microeng 25:115022

    Article  CAS  Google Scholar 

  • Clark IT, Aldinger BS, Gupta A, Hines MA (2010) Aqueous etching produces Si(100) surfaces of near-atomic flatness: strain minimization does not predict surface morphology. J Phys Chem C 114:423–428

    Article  CAS  Google Scholar 

  • Clement D, Diener J, Gross E, Kunzner N, Timoshenko VY, Kovalev D (2005) Highly explosive nanosilicon-based composite materials. Phys Status Solidi A 202:1357–1364

    Article  CAS  Google Scholar 

  • da Rosa CP, Maboudian R, Iglesia E (2008) Copper deposition onto silicon by galvanic displacement: effect of silicon dissolution rate. J Electrochem Soc 155:E70–E78

    Article  CAS  Google Scholar 

  • DelRio FW, Cook RF, Boyce BL (2015) Fracture strength of micro- and nano-scale silicon components. Appl Phys Rev 2:021303

    Article  CAS  Google Scholar 

  • du Plessis M (2014) A decade of porous silicon as nano-explosive material. Propellants Explos Pyrotechnics 39:348–364

    Article  CAS  Google Scholar 

  • Dudley ME, Kolasinski KW (2008) Wet etching of pillar covered silicon surface: formation of crystallographically defined macropores. J Electrochem Soc 155:H164–H171

    Article  CAS  Google Scholar 

  • Gondek C, Lippold M, Röver I, Bohmhammel K, Kroke E (2014) Etching silicon with HF-H2O2-based mixtures: reactivity studies and surface investigations. J Phys Chem C 118:2044–2051

    Article  CAS  Google Scholar 

  • Gorostiza P, Anbu Kulandainathan M, Díaz R, Sanz F, Allongue P, Morante JR (2000) Charge exchange processes during the open-circuit deposition of nickel on silicon from fluoride solutions. J Electrochem Soc 147:1026–1030

    Article  CAS  Google Scholar 

  • Gorostiza P, Allongue P, Díaz R, Morante JR, Sanz F (2003) Electrochemical characterization of the open-circuit deposition of platinum on silicon from fluoride solutions. J Phys Chem B 107:6454–6461

    Article  CAS  Google Scholar 

  • Harada Y, Li X, Bohn PW, Nuzzo RG (2001) Catalytic amplification of the soft lithographic patterning of Si. Nonelectrochemical orthogonal fabrication of photoluminescent porous Si pixel arrays. J Am Chem Soc 123:8709–8717

    Article  CAS  Google Scholar 

  • Hines MA (2003) In search of perfection: understanding the highly defect-selective chemistry of anisotropic etching. Annu Rev Phys Chem 54:29–56

    Article  CAS  Google Scholar 

  • Hines MA, Faggin MF, Gupta A, Aldinger BS, Bao K (2012) Self-propagating reaction produces near-ideal functionalization of Si(100) and flat surfaces. J Phys Chem C 116:18920–18929

    Article  CAS  Google Scholar 

  • Huang Z, Geyer N, Werner P, de Boor J, Gösele U (2011) Metal-assisted chemical etching of silicon: a review. Adv Mater 23:285–308

    Article  CAS  Google Scholar 

  • Huh M, Yu Y, Kahn H, Payer J, Heuer A (2006) Galvanic corrosion during processing of polysilicon microelectromechanical systems – the effect of Au metallization. J Electrochem Soc 153:G644–G649

    Article  CAS  Google Scholar 

  • Kahn H, Deeb C, Chasiotis I, Heuer AH (2005) Anodic oxidation during MEMS processing of silicon and polysilicon: native oxides can be thicker than you think. J Microelectromech Syst 14:914–923

    Article  CAS  Google Scholar 

  • Kelly JJ, Philipsen HGG (2005) Anisotropy in the wet-etching of semiconductors. Curr Opin Solid State Mater Sci 9:84–90

    Article  CAS  Google Scholar 

  • Kelly JJ, Xia XH, Ashruf CMA, French PJ (2001) Galvanic cell formation: a review of approaches to silicon etching for sensor fabrication. IEEE Sensors J 1:127–142

    Article  CAS  Google Scholar 

  • Koker L, Kolasinski KW (2000) Photoelectrochemical etching of Si and porous Si in aqueous HF. Phys Chem Chem Phys 2:277–281

    Article  CAS  Google Scholar 

  • Koker L, Kolasinski KW (2001) Laser-assisted formation of porous silicon in diverse fluoride solutions: reactions kinetics and mechanistic implications. J Phys Chem B 105:3864–3871

    Article  CAS  Google Scholar 

  • Kolasinski KW (2003) The mechanism of Si etching in fluoride solutions. Phys Chem Chem Phys 5:1270–1278

    Article  CAS  Google Scholar 

  • Kolasinski KW (2009) Etching of silicon in fluoride solutions. Surf Sci 603:1904–1911

    Article  CAS  Google Scholar 

  • Kolasinski KW (2010) Charge transfer and nanostructure formation during electroless etching of silicon. J Phys Chem C 114:22098–22105

    Article  CAS  Google Scholar 

  • Kolasinski KW (2014) The mechanism of galvanic/metal-assisted etching of silicon. Nanoscale Res Lett 9:432

    Article  CAS  Google Scholar 

  • Kolasinski KW (2015) The mechanism of metal-assisted etching. In: Korotcenkov G (ed) Porous silicon: from formation to application: formation and properties, vol 1. CRC Press, Boca Roton, pp 291–304

    Chapter  Google Scholar 

  • Kolasinski KW (2016) Electron transfer during metal-assisted and stain etching of silicon. Semicond Sci Technol 31:014002

    Article  CAS  Google Scholar 

  • Kolasinski KW, Gogola JW (2012) Electroless etching of Si with IO3− and related species. Nanoscale Res Lett 7:323

    Article  Google Scholar 

  • Kolasinski KW, Gogola JW, Barclay WB (2012) A test of Marcus theory predictions for electroless etching of silicon. J Phys Chem C 116:21472–21481

    Article  CAS  Google Scholar 

  • Kolasinski KW, Barclay WB, Sun Y, Aindow M (2015) The stoichiometry of metal assisted etching of Si in V2O5 + HF and HOOH + HF solutions. Electrochim Acta 158:219–228

    Article  CAS  Google Scholar 

  • Kovalev D, Timoshenko VY, Künzner N, Gross E, Koch F (2001) Strong explosive interaction of hydrogenated porous silicon with oxygen at cryogenic temperatures. Phys Rev Lett 87:068301

    Article  CAS  Google Scholar 

  • Lehmann V (2002) Electrochemistry of silicon: instrumentation, science, materials and applications. Wiley-VCH, Weinheim

    Book  Google Scholar 

  • Li XL (2012) Metal assisted chemical etching for high aspect ratio nanostructures: a review of characteristics and applications in photovoltaics. Curr Opin Solid State Mater Sci 16:71–81

    Article  CAS  Google Scholar 

  • Li X, Bohn PW (2000) Metal-assisted chemical etching in HF/H2O2 produces porous silicon. Appl Phys Lett 77:2572–2574

    Article  CAS  Google Scholar 

  • Liu YF, Xie J, Zhao H, Luo W, Yang JL, An J, Yang FH (2012) An effective approach for restraining electrochemical corrosion of polycrystalline silicon caused by an HF-based solution and its application for mass production of MEMS devices. J Micromech Microeng 22:035003

    Article  CAS  Google Scholar 

  • Macuk AL, Timpe SJ (2013) Effect of galvanic corrosion-induced roughness on sidewall adhesion in polycrystalline silicon microelectromechanical systems. J Microelectromech Sys 22:259–261

    Article  CAS  Google Scholar 

  • Magagnin L, Maboudian R, Carraro C (2002) Gold deposition by galvanic displacement on semiconductor surfaces: effect of substrate on adhesion. J Phys Chem B 106:401–407

    Article  CAS  Google Scholar 

  • Meltzer S, Mandler D (1995) Study of silicon etching in HBr solutions using a scanning electrochemical microscope. J Chem Soc Faraday Trans 91:1019–1024

    Article  CAS  Google Scholar 

  • Miller DC, Gall K, Stoldt CR (2005) Galvanic corrosion of miniaturized polysilicon structures morphological, electrical, and mechanical effects. Electrochem Solid State Lett 8:G223–G226

    Article  CAS  Google Scholar 

  • Miller DC, Hughes WL, Wang ZL, Gall K, Stoldt CR (2007) Mechanical effects of galvanic corrosion on structural polysilicon. J Microelectromech Syst 16:87–101

    Article  CAS  Google Scholar 

  • Miller DC, Becker CR, Stoldt CR (2008) Relation between morphology, etch rate, surface wetting, and electrochemical characteristics for micromachined silicon subject to galvanic corrosion. J Electrochem Soc 155:F253–F265

    Article  CAS  Google Scholar 

  • Muhlstein CL, Stach EA, Ritchie RO (2002) A reaction-layer mechanism for the delayed failure of micron-scale polycrystalline silicon structural films subjected to high-cycle fatigue loading. Acta Mater 50:3579–3595

    Article  CAS  Google Scholar 

  • Nakamura T, Hosoya N, Tiwari BP, Adachi S (2010) Properties of silver/porous-silicon nanocomposite powders prepared by metal assisted electroless chemical etching. J Appl Phys 108:104315

    Article  CAS  Google Scholar 

  • Nakamura T, Tiwari BP, Adachi S (2011) Direct synthesis and enhanced catalytic activities of platinum and porous-silicon composites by metal-assisted chemical etching. Jpn J Appl Phys 50:081301

    Article  Google Scholar 

  • Nielsen D, Abuhassan L, Alchihabi M, Al-Muhanna A, Host J, Nayfeh MH (2007) Current-less anodization of intrinsic silicon powder grains: formation of fluorescent Si nanoparticles. J Appl Phys 101:114302

    Article  CAS  Google Scholar 

  • Noguchi N, Suemune I (1993) Luminescent porous silicon synthesized by visible light irradiation. Appl Phys Lett 62:1429–1431

    Article  CAS  Google Scholar 

  • Noguchi N, Suemune I (1994) Selective formation of luminescent porous silicon by photosynthesis. J Appl Phys 75:4765–4767

    Article  CAS  Google Scholar 

  • Ogata YH, Kobayashi K (2006) Electrochemical metal deposition on silicon. Curr Opin Solid State Mater Sci 10:163–172

    Article  CAS  Google Scholar 

  • Ohkura Y, Weisse JM, Cai LL, Zheng XL (2013) Flash ignition of freestanding porous silicon films: effects of film thickness and porosity. Nano Lett 13:5528–5533

    Article  CAS  Google Scholar 

  • Parimi VS, Tadigadapa SA, Yetter RA (2014) Reactive wave propagation mechanisms in energetic porous silicon composites. Combust Sci Technol 187:249–268

    Article  CAS  Google Scholar 

  • Parimi VS, Tadigadapa SA, Yetter RA (2014) Effect of substrate doping on microstructure and reactivity of porous silicon. Chem Phys Lett 609:129–133

    Article  CAS  Google Scholar 

  • Peng K-Q, Yan Y-J, Gao S-P, Zhu J (2002) Synthesis of large-area silicon nanowire arrays via self-assembling nanoelectrochemistry. Adv Mater 14:1164–1167

    Article  CAS  Google Scholar 

  • Peng K-Q, Yan Y-J, Gao S-P, Zhu J (2003) Dendrite-assisted growth of silicon nanowires in electroless metal deposition. Adv Func Mater 13:127–132

    Article  CAS  Google Scholar 

  • Piekiel NW, Morris CJ (2015) Small-scale, self-propagating combustion realized with on-chip porous silicon. ACS Appl Mater Interfaces 7:9889–9897

    Article  CAS  Google Scholar 

  • Piekiel NW, Morris CJ, Churaman WA, Cunningham ME, Lunking DM, Currano LJ (2015) Combustion and material characterization of highly tunable on-chip energetic porous silicon. Propellants Explos Pyrotechnics 40:16–26

    Article  CAS  Google Scholar 

  • Pierron ON, Macdonald DD, Muhlstein CL (2005) Galvanic effects in Si-based microelectromechanical systems: thick oxide formation and its implications for fatigue reliability. Appl Phys Lett 86:211919

    Article  CAS  Google Scholar 

  • Quint SB, Pacholski C (2009) A chemical route to sub-wavelength hole arrays in metallic films. J Mater Chem 19:5906–5908

    Article  CAS  Google Scholar 

  • Song YY, Gao ZD, Kelly JJ, Xia XH (2005) Galvanic deposition of nanostructured noble-metal films on silicon. Electrochem Solid State Lett 8:C148–C150

    Article  CAS  Google Scholar 

  • Splinter A, Stürmann J, Benecke W (2001) Novel porous silicon formation technology using internal current generation. Mater Sci Eng C 15:109–112

    Article  Google Scholar 

  • Splinter A, Sturmann J, Benecke W (2001) New porous silicon formation technology using internal current generation with galvanic elements. Sens Actuators A 92:394–399

    Article  CAS  Google Scholar 

  • Sun NN, Chen JM, Jiang C, Zhang YJ, Shi F (2012) Enhanced wet-chemical etching to prepare patterned silicon mask with controlled depths by combining photolithography with galvanic reaction. Ind Eng Chem Res 51:793–799

    Google Scholar 

  • Turner DR (1960) On the mechanism of chemically etching germanium and silicon. J Electrochem Soc 107:810–816

    Article  CAS  Google Scholar 

  • Wang CH, Sun DC, Xia XH (2006) One-step formation of nanostructured gold layers via a galvanic exchange reaction for surface enhancement Raman scattering. Nanotechnology 17:651–657

    Article  CAS  Google Scholar 

  • Xia XH, Ashruf CMA, French PJ, Kelly JJ (2000) Galvanic cell formation in silicon/metal contacts: the effect on silicon surface morphology. Chem Mater 12:1671–1678

    Article  CAS  Google Scholar 

  • Zhou X, Torabi M, Lu J, Shen RQ, Zhang KL (2014) Nanostructured energetic composites: synthesis, ignition/combustion modeling, and applications. ACS Appl Mater Interfaces 6:3058–3074

    Article  CAS  Google Scholar 

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Authors and Affiliations

  1. Department of Chemistry, West Chester University, West Chester, PA, 19380, USA

    Kurt W. Kolasinski

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  1. Kurt W. Kolasinski
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Correspondence to Kurt W. Kolasinski .

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  1. School of Physics and Astronomy, University of Birmingham, Birmingham, Worcestershire, United Kingdom

    Leigh Canham

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Kolasinski, K.W. (2018). Porous Silicon Formation by Galvanic Etching. In: Canham, L. (eds) Handbook of Porous Silicon. Springer, Cham. https://doi.org/10.1007/978-3-319-71381-6_3

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