Abstract
It has been established that continuous variations of impurity concentration and temperature in silicon and other semiconductors give rise to phase transitions in the range of existence of solid and liquid solutions. The specific feature of these phase transformations is the occurrence of a phase transition proper in the range of the varying parameter of state, which is accompanied by a thermal effect. In such ranges, all the electrophysical and thermodynamic properties oscillate. It has also been shown that these oscillations result from the equilibrium self-organization of the material. The beginning of phase transitions with the change of the temperature depends on the concentration of defect in the initial material. The “driving force” of the phase transformations is the instability arising in the material with the variations in the temperature and the component concentrations.
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Translated from Kristallografiya, Vol. 46, No. 1, 2001, pp. 88–94.
Original Russian Text Copyright © 2001 by Gubenko.
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Gubenko, A.Y. Phase transitions in solid and liquid silicon. Crystallogr. Rep. 46, 81–87 (2001). https://doi.org/10.1134/1.1343132
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DOI: https://doi.org/10.1134/1.1343132