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α–β Phase Transition in the Impurity Phase of a SiO2 Single Crystal

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Abstract

Thermal oxidation of a silicon single crystal in the temperature range of 293–1293 K has been investigated using high-temperature X-ray diffractometry directly in a beam. An anomaly in the intensity and angular position of diffuse scattering from the single-crystal surface is found. The anomaly is explained as being due to oxidation of the silicon surface according to the Deal–Grove model and sublimation of the oxide layer in dependence of temperature. It is established that the single-crystal bulk (silicon medium) underwent the α–β phase transition in the crystalline impurity phase of silicon dioxide in this temperature range, which is similar to the α–β transition of quartz in air.

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ACKNOWLEDGMENTS

We are sincerely grateful to B.S. Yuldashev for constant attention and support in all stages of this research study.

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Authors and Affiliations

  1. Institute of Nuclear Physics, Academy of Sciences of Uzbekistan, 100214, Tashkent, Uzbekistan

    M. U. Kalanov & A. V. Khugaev

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  1. M. U. Kalanov
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  2. A. V. Khugaev
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Correspondence to M. U. Kalanov.

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The authors declare that they have no conflict of interest.

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Translated by A. Sin’kov

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Kalanov, M.U., Khugaev, A.V. α–β Phase Transition in the Impurity Phase of a SiO2 Single Crystal. Tech. Phys. Lett. 47, 349–352 (2021). https://doi.org/10.1134/S1063785021040106

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  • DOI: https://doi.org/10.1134/S1063785021040106

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