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Distribution of electrons between valleys and band-gap narrowing at picosecond superluminescence in GaAs

  • Electronic and Optical Properties of Semiconductors
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Abstract

Band-gap narrowing due to photogeneration of dense hot electron-hole plasma in GaAs was studied. Plasma was generated by picosecond light pulses, and picosecond superluminescence was observed. In this case, the total concentration of photogenerated electron-hole pairs was experimentally proved to be the sole parameter controlling the electron distribution between Γ6 and L 6 valleys and the corresponding band-gap narrowing. This was explained by the fact that the carrier temperature and concentration are correlated in the presence of superluminescence.

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Authors and Affiliations

  1. Institute of Radio Engineering and Electronics, Russian Academy of Sciences, ul. Mokhovaya 18, Moscow, 103907, Russia

    N. N. Ageeva, I. L. Bronevoi & A. N. Krivonosov

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  1. N. N. Ageeva
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  2. I. L. Bronevoi
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  3. A. N. Krivonosov
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__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 35, No. 1, 2001, pp. 65–69.

Original Russian Text Copyright © 2001 by Ageeva, Bronevo\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \), Krivonosov.

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Ageeva, N.N., Bronevoi, I.L. & Krivonosov, A.N. Distribution of electrons between valleys and band-gap narrowing at picosecond superluminescence in GaAs. Semiconductors 35, 67–71 (2001). https://doi.org/10.1134/1.1340291

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