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A long-range influence of the argon-ion irradiation on the silicon nitride layers formed by the ion implantation

  • Atomic Structure and Nonelectronic Properties of Semiconductors
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Abstract

The effect of stimulating synthesis reactions for the Si3N4 phase in nitrogen-enriched silicon layers under the influence of argon-ion implantation into the rear side of silicon wafers was investigated. Dependences of variations in the IR absorption and the resistivity of the synthesized layers on argon-implantation dose were obtained. The morphology of a wafer surface after argon implantation with various doses was investigated by atomic-force microscopy. The effect is attributed to the action of shock waves arising owing to microbursts of argon blisters.

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References

  1. P. V. Pavlov, E. S. Demidov, and V. V. Karzanov, Vysokochist. Veshchestva, No. 3, 31 (1993).

  2. P. V. Pavlov, K. A. Markov, V. V. Karzanov, and E. S. Demidov, Vysokochist. Veshchestva, No. 2, 56 (1995).

  3. E. S. Demidov, K. A. Markov, and V. V. Karzanov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 34, 170 (2000) [Semiconductors 34, 163 (2000)].

    Google Scholar 

  4. Yu. A. Volgin and I. N. Ukhanov, Opt. Spektrosk. 38(4), 727 (1975) [Opt. Spectrosc. 38, 412 (1975)].

    Google Scholar 

  5. M. Lampert and P. Mark, Current Injection in Solids (Academic, New York, 1970; Mir, Moscow, 1973).

    Google Scholar 

  6. A. F. Burenkov, F. F. Komarov, M. A. Kumakhov, and M. M. Temkin, Tables of Parameters of Spatial Distribution of Ion-Implanted Impurities (Belarus. Gos. Univ., Minsk, 1980), p. 114.

    Google Scholar 

  7. O. Yamada, in The Chemistry of Synthesis by Combustion, Ed. by M. Koizumi (Mir, Moscow, 1998), translated from Japanese.

    Google Scholar 

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Authors and Affiliations

  1. Nizhni Novgorod State University, pr. Gagarina 23, Nizhni Novgorod, 603600, Russia

    E. S. Demidov, V. V. Karzanov, D. A. Lobanov, K. A. Markov & V. V. Sdobnyakov

Authors
  1. E. S. Demidov
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  2. V. V. Karzanov
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  3. D. A. Lobanov
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  4. K. A. Markov
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  5. V. V. Sdobnyakov
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__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 35, No. 1, 2001, pp. 21–24.

Original Russian Text Copyright © 2001 by Demidov, Karzanov, Lobanov, Markov, Sdobnyakov.

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Demidov, E.S., Karzanov, V.V., Lobanov, D.A. et al. A long-range influence of the argon-ion irradiation on the silicon nitride layers formed by the ion implantation. Semiconductors 35, 20–23 (2001). https://doi.org/10.1134/1.1340284

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  • DOI: https://doi.org/10.1134/1.1340284

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