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Phonon laser and indirect exciton dispersion engineering

  • Condensed Matter
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Abstract

Engineering of dispersion of indirect excitons by normal electric and in-plane magnetic fields is proposed to be used for controlling the state of many-exciton system (e.g., coherent state) and its photoluminescence and for producing an inverse population in the excitonic system. The possibility of phonon laser creation on the basis of the latter effect is discussed. Phonon number distribution appears to be a fingerprint of that in exciton system. Numerical estimations for the proposed scheme are made for GaAs/AlGaAs quantum wells.

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Translated From Pis’ma v Zhurnal Éksperimental’no\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) i Teoretichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 72, No. 8, 2000, pp. 617–622.

Original English Text Copyright © 2000 by Lozovik, Ovchinnikov.

This article was submitted by the authors in English.

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Lozovik, Y.E., Ovchinnikov, I.V. Phonon laser and indirect exciton dispersion engineering. Jetp Lett. 72, 431–435 (2000). https://doi.org/10.1134/1.1335123

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  • DOI: https://doi.org/10.1134/1.1335123

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