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A comparative study of the atomic hydrogen penetration into thin vanadium films and silicon oxide-gallium arsenide structures

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Abstract

It was established that the laws of atomic hydrogen penetration from an arc reflection discharge gap with a hollow cathode and self-heating element into GaAs samples coated with a thin SiO2 film differ significantly from the laws observed for the hydrogenation of thin vanadium films. The amount of hydrogen penetrating into the SiO2/GaAs system decreases with increasing atomic hydrogen concentration in the gas phase. This is apparently related to a decrease in the probability of hydrogen atoms penetrating into the substrate, which is suggested to drop significantly with decreasing atomic energy and/or increasing hydrogen content in a thin subsurface layer.

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References

  1. Hydrogen in Metals, Ed. by G. Alefeld and J. Voekl (Springer-Verlag, New York, 1978; Mir, Moscow, 1981).

    Google Scholar 

  2. E. Fromm and E. Gebhardt, Gase und Kohlenstoff in Metallen (Springer-Verlag, Berlin, 1976; Metallurgiya, Moscow, 1980).

    Google Scholar 

  3. Interaction of Hydrogen with Metals, Ed. by A. P. Zakharov (Nauka, Moscow, 1987).

    Google Scholar 

  4. A. Y. Polyakov, N. B. Smirnov, A. A. Chelniy, et al., Solid-State Electron. 38(4), 771 (1995).

    Article  Google Scholar 

  5. V. A. Kagadei and D. I. Proskurovsky, J. Vac. Sci. Technol. A 16(4), 2556 (1998).

    Article  ADS  Google Scholar 

  6. R. Morrow, J. Appl. Phys. 66(7), 2973 (1989).

    Article  ADS  Google Scholar 

  7. N. Watanabe, T. Nittono, I. Hirishi, et al., J. Appl. Phys. 73(12), 8146 (1993).

    Article  ADS  Google Scholar 

  8. A. M. Bruneteau, G. Hollos, M. Bacal, and J. Bretagne, J. Appl. Phys. 67(12), 7254 (1990).

    Article  ADS  Google Scholar 

  9. Yu. P. Raizer, The Physics of Gas Discharge (Nauka, Moscow, 1987).

    Google Scholar 

  10. E. C. Samano, W. E. Carr, M. Siedl, and B. S. Lee, Rev. Sci. Instrum. 64(10), 2746 (1993).

    Article  ADS  Google Scholar 

  11. T. J. Sommerer and M. J. Kushner, J. Appl. Phys. 70(3), 1240 (1991).

    Article  ADS  Google Scholar 

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Authors and Affiliations

  1. Institute of Semiconductor Devices, State Research and Production Enterprise, Tomsk, Russia

    V. G. Bozhkov & V. A. Kagadei

  2. Institute of High-Current Electronics, Siberian Division, Russian Academy of Sciences, Tomsk, Russia

    D. I. Proskurovskii & L. M. Romas’

Authors
  1. V. G. Bozhkov
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  2. V. A. Kagadei
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  3. D. I. Proskurovskii
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  4. L. M. Romas’
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\) Fiziki, Vol. 26, No. 20, 2000, pp. 75–81.

Original Russian Text Copyright © 2000 by Bozhkov, Kagade\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\), Proskurovski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\), Romas’.

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Bozhkov, V.G., Kagadei, V.A., Proskurovskii, D.I. et al. A comparative study of the atomic hydrogen penetration into thin vanadium films and silicon oxide-gallium arsenide structures. Tech. Phys. Lett. 26, 926–928 (2000). https://doi.org/10.1134/1.1321241

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  • DOI: https://doi.org/10.1134/1.1321241

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