Skip to main content
SpringerLink
Log in

Single-crystalline GaAs, AlGaAs, and InGaAs layers grown by metalorganic VPE on porous GaAs substrates

  • Published:
Technical Physics Letters Aims and scope Submit manuscript

Abstract

Conditions for the growth of single-crystalline GaAs, AlGaAs, and InGaAs layers by metalorganic VPE were established and the corresponding semiconductor films were obtained on porous GaAs substrates. Comparative data on the morphology, structure, and electrical homogeneity of the epitaxial layers grown on the porous and monolithic substrates are presented. It was found that passage to the porous substrates leads to changes in the film growth rate and morphology, the concentration of electrically active defects, and their distribution in depth of the epitaxial structures.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. T. Unagami and S. J. Masashiro, J. Electrochem. Soc. 125, 1339 (1979).

    Google Scholar 

  2. V. P. Bondarenko, N. N. Voronov, and V. V. Dikareva, Pis’ma Zh. Tekh. Fiz. 20, 5 (1994) [Tech. Phys. Lett. 20, 410 (1994)].

    Google Scholar 

  3. L. P. Belyakov, I. B. Zakharova, and T. I. Zubkova, Fiz. Tekh. Poluprovodn. (St. Petersburg) 31, 93 (1997) [Semicond. 31, 76 (1997)].

    Google Scholar 

  4. Yu. Buzynin, S. Gusev, Yu. Drozdov, et al., Proceedings of International Symposium ALT’95, Proc. SPIE 2777, 43 (1995).

    ADS  Google Scholar 

  5. I. V. Irin and A. V. Murel’, Prib. Tekh. Éksp., No. 6, 150 (1993).

Download references

Author information

Authors and Affiliations

  1. Institute of Microstructure Physics, Russian Academy of Sciences, Nizhni Novgorod, Russia

    Yu. N. Buzynin, S. A. Gusev, V. M. Danil’tsev, M. N. Drozdov, Yu. N. Drozdov, A. V. Murel’, O. I. Khrykin & V. I. Shashkin

Authors
  1. Yu. N. Buzynin
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. S. A. Gusev
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. V. M. Danil’tsev
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. M. N. Drozdov
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. Yu. N. Drozdov
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. A. V. Murel’
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. O. I. Khrykin
    View author publications

    You can also search for this author in PubMed Google Scholar

  8. V. I. Shashkin
    View author publications

    You can also search for this author in PubMed Google Scholar

Additional information

__________

Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 26, No. 7, 2000, pp. 64–69.

Original Russian Text Copyright © 2000 by Buzynin, Gusev, Danil’tsev, Drozdov, Drozdov, Murel’, Khrykin, Shashkin.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Buzynin, Y.N., Gusev, S.A., Danil’tsev, V.M. et al. Single-crystalline GaAs, AlGaAs, and InGaAs layers grown by metalorganic VPE on porous GaAs substrates. Tech. Phys. Lett. 26, 298–301 (2000). https://doi.org/10.1134/1.1262823

Download citation

  • Received:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.1134/1.1262823

Keywords

Search

Navigation