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On the Growth of Thin-Film AlGaN/GaN Epitaxial Heterostructures on Hybrid Substrates Containing Layers of Silicon Carbide and Porous Silicon

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Abstract—In our work, we carry out a structural-spectroscopic study of AlGaN/GaN epitaxial layers grown by molecular-beam epitaxy with nitrogen-plasma activation on a hybrid substrate containing layers of silicon carbide and porous silicon. Using X-ray diffractometry, Raman and photoluminescence spectroscopy, it is shown that thin films formed on a hybrid substrate have minimal residual stresses and intense photoluminescence.

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ACKNOWLEDGMENTS

X-ray studies were performed using the equipment of the resource center “X-ray diffraction methods of research” of St. Petersburg State University.

Funding

This work was supported by the Russian Science Foundation (grant no. 19-72-10007).

The work was partly supported by the Ministry of Education and Science of the Russian Federation (grant no. FZGU-2020-0036 and no. FSRM-2020-0008).

Concerning access to scientific equipment and the methodology, this study was supported by the Ministry of Science and Higher Education of Russia under Agreement N 075-15-2021-1351.

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Authors and Affiliations

  1. Voronezh State University, 394018, Voronezh, Russia

    P. V. Seredin, Ali Obaid Radam, D. L. Goloshchapov, A. S. Len’shin, N. S. Buylov, K. A. Barkov & D. N. Nesterov

  2. Ural Federal University named after the first President of Russia B.N. Yeltsin, 620002, Yekaterinburg, Russia

    P. V. Seredin

  3. Voronezh State University of Engineering Technologies, 394036, Voronezh, Russia

    A. S. Len’shin

  4. Federal State Budgetary Institution of Higher Education and Science “St. Petersburg National Research Academic University,” Russian Academy of Sciences, 194021, St. Petersburg, Russia

    A. M. Mizerov, S. N. Timoshnev & E. V. Nikitina

  5. Ioffe Institute, 194021, St. Petersburg, Russia

    I. N. Arsentyev & Sh. Sharafidinov

  6. Institute for Problems of Mechanical Engineering, Russian Academy of Sciences, 199178, St. Petersburg, Russia

    S. A. Kukushkin

  7. St. Petersburg State University, 199034, St. Petersburg, Russia

    I. A. Kasatkin

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  1. P. V. Seredin
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Correspondence to P. V. Seredin.

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Seredin, P.V., Radam, A.O., Goloshchapov, D.L. et al. On the Growth of Thin-Film AlGaN/GaN Epitaxial Heterostructures on Hybrid Substrates Containing Layers of Silicon Carbide and Porous Silicon. Semiconductors 56, 253–258 (2022). https://doi.org/10.1134/S1063782622040030

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