Abstract
The reverse current in a semiconductor diode with inhomogeneous base has been calculated. The base was modified so as to contain a layer with increased bandgap, adjacent to the ohmic contact. It is demonstrated that this modification may dramatically reduce the reverse current related to the thermal carrier generation both in the base and at the ohmic contact.
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References
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 26, No. 7, 2000, pp. 51–56.
Original Russian Text Copyright © 2000 by Sokolovski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \).
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Sokolovskii, B.S. Reverse current in semiconductor diodes with inhomogeneous base. Tech. Phys. Lett. 26, 292–294 (2000). https://doi.org/10.1134/1.1262821
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DOI: https://doi.org/10.1134/1.1262821