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Current–voltage characteristics of Schottky diodes at high current densities under the injection of minority carriers

  • Physics of Semiconductor Devices
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Abstract

An analytical expression is derived for the current–voltage characteristic of a Schottky diode at a high injection level of minority carriers. It is shown that, even at very high current densities, the higher the base doping level, the larger the voltage drop across the diode. The physical mechanism responsible for this “paradoxical” result is analyzed. The validity of the analytical result is confirmed by a numerical calculation with software that takes into account the whole set of nonlinear effects caused by a high injection level in the base layer and by heavy doping of the emitter region.

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Authors and Affiliations

  1. All-Russia Electrotechnical Institute, Moscow, 111250, Russia

    T. T. Mnatsakanov, A. G. Tandoev & S. N. Yurkov

  2. Ioffe Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    M. E. Levinshtein

  3. Wolfspeed, A Cree Company, 3026 East Cornwallis Rd., Research Triangle Park, New York, NC, 27709, USA

    J. W. Palmour

Authors
  1. T. T. Mnatsakanov
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  2. A. G. Tandoev
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  3. M. E. Levinshtein
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  4. S. N. Yurkov
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  5. J. W. Palmour
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Corresponding author

Correspondence to T. T. Mnatsakanov.

Additional information

Original Russian Text © T.T. Mnatsakanov, A.G. Tandoev, M.E. Levinshtein, S.N. Yurkov, J.W. Palmour, 2017, published in Fizika i Tekhnika Poluprovodnikov, 2017, Vol. 51, No. 8, pp. 1125–1130.

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Mnatsakanov, T.T., Tandoev, A.G., Levinshtein, M.E. et al. Current–voltage characteristics of Schottky diodes at high current densities under the injection of minority carriers. Semiconductors 51, 1081–1086 (2017). https://doi.org/10.1134/S1063782617080231

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  • DOI: https://doi.org/10.1134/S1063782617080231

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