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Hydrogen microdoping of the near-surface layers of gallium arsenide

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Abstract

A method of the semiconductor surface microdoping with hydrogen ions in a plasma-beam discharge is proposed. The results of experiments with GaAs showed the new method to be comparable in efficiency with the conventional methods of surface modification by ion beams.

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Authors and Affiliations

  1. Tomsk State University, Tomsk, 634050, Russia

    V. V. Anisimov & V. P. Demkin

  2. Institute of Strength Physics and Materials Science, Siberian Division, Russian Academy of Sciences, Tomsk, 634055, Russia

    I. A. Kvint, S. V. Mel’nichuk & B. S. Semukhin

Authors
  1. V. V. Anisimov
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  2. V. P. Demkin
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  3. I. A. Kvint
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  4. S. V. Mel’nichuk
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  5. B. S. Semukhin
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 26, No. 7, 2000, pp. 35–42.

Original Russian Text Copyright © 2000 by Anisimov, Demkin, Kvint,. Mel’nichuk, Semukhin.

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Anisimov, V.V., Demkin, V.P., Kvint, I.A. et al. Hydrogen microdoping of the near-surface layers of gallium arsenide. Tech. Phys. Lett. 26, 284–287 (2000). https://doi.org/10.1134/1.1262819

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  • DOI: https://doi.org/10.1134/1.1262819

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