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Laser-initiated anomalous diffusion of oxygen in a surface silicon layer enriched with defects

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Abstract

The effect of anomalously slow relaxation of deformation of silicon surface after laser stimulation is revealed and described. This effect is attributed to “cold” diffusion of oxygen in the surface layer enriched with defects.

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Authors and Affiliations

  1. Institute of Problems in Laser and Information Technologies, Russian Academy of Sciences, Shatura, Russia

    A. F. Banishev, V. S. Golubev & A. Yu. Kremnev

Authors
  1. A. F. Banishev
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  2. V. S. Golubev
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  3. A. Yu. Kremnev
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\) Fiziki, Vol. 26, No. 2, 2000, pp. 8–12.

Original Russian Text Copyright © 2000 by Banishev, Golubev, Kremnev.

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Banishev, A.F., Golubev, V.S. & Kremnev, A.Y. Laser-initiated anomalous diffusion of oxygen in a surface silicon layer enriched with defects. Tech. Phys. Lett. 26, 49–50 (2000). https://doi.org/10.1134/1.1262737

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  • DOI: https://doi.org/10.1134/1.1262737

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