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Nature of the transitional region during the deposition of titanium boride and nitride films on gallium arsenide

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Abstract

Photoluminescence and x-ray photoelectron spectroscopy methods were used to analyze the compositions of the near-junction regions of titanium boride (nitride)-gallium arsenide heterostructures. Data have been obtained for the first time on the formation of GaxB1−x As and GaAsxN1−x solid solutions, which play an important role in the formation of the properties and the thermal stability of the experimental structures on the interphase boundary of these structures.

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Authors and Affiliations

  1. Institute of Semiconductor Physics, Ukrainian National Academy of Sciences, Kiev

    I. B. Ermolovich, R. V. Konakova, V. V. Milenin & A. I. Senkevich

Authors
  1. I. B. Ermolovich
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  2. R. V. Konakova
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  3. V. V. Milenin
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  4. A. I. Senkevich
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Additional information

Pis’ma Zh. Tekh. Fiz. 25, 71–76 (October 12, 1999)

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Ermolovich, I.B., Konakova, R.V., Milenin, V.V. et al. Nature of the transitional region during the deposition of titanium boride and nitride films on gallium arsenide. Tech. Phys. Lett. 25, 789–791 (1999). https://doi.org/10.1134/1.1262636

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  • DOI: https://doi.org/10.1134/1.1262636

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