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AlGaAsSb lasers emitting in the 1.6 μm region

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Abstract

AlGaAsSb lasers with different Al concentrations in the active and confinement regions are fabricated and investigated. The structures lase in the region ∼1.6 μm. The AlGaAsSb solid solution in the active region is a direct-gap material with a small energy separation (∼56 meV) between the direct-gap Γ minimum and the indirect-gap L minimum of the conduction band. The lasers have a single-mode spectrum with a predominant longitudinal mode in the spatial distribution of the emission. The lasers operate at room temperature in a pulsed mode.

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Authors and Affiliations

  1. A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg

    T. N. Danilova, B. E. Zhurtanov, A. N. Imenkov, M. A. Sipovskaya & Yu. P. Yakovlev

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  1. T. N. Danilova
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  2. B. E. Zhurtanov
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  3. A. N. Imenkov
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  4. M. A. Sipovskaya
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  5. Yu. P. Yakovlev
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Additional information

Pis’ma Zh. Tekh. Fiz. 25, 35–41 (May 26, 1999)

Translated by Steve Torstveit

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Danilova, T.N., Zhurtanov, B.E., Imenkov, A.N. et al. AlGaAsSb lasers emitting in the 1.6 μm region. Tech. Phys. Lett. 25, 395 (1999). https://doi.org/10.1134/1.1262494

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  • DOI: https://doi.org/10.1134/1.1262494

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