Abstract
An experimental investigation was made of the influence of microwave irradiation on the low-frequency current-voltage characteristics of p-n junction diodes. It is shown that when the microwave power increases to a certain level, a clearly defined S-shaped section appears on the current-voltage characteristic of the diode. This section becomes broader as the microwave signal increases further and then disappears when the microwave irradiation ceases.
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Pis’ma Zh. Tekh. Fiz. 25, 42–45 (January 12, 1999)
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Usanov, D.A., Skripal’, A.V. & Ugryumova, N.V. Appearance of S-shaped sections on the current-voltage characteristics of p-n junction diodes exposed to microwave radiation. Tech. Phys. Lett. 25, 17–18 (1999). https://doi.org/10.1134/1.1262365
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DOI: https://doi.org/10.1134/1.1262365