Abstract
A methodology has been developed for growing InGaAsP/InP multiwell laser heterostructures by liquid-phase epitaxy. Depth profiling using a secondary ion mass spectrometer was used to investigate the distribution profiles of the composition of multiwell laser heterostructures. Liquid-phase epitaxy was used to fabricate InGaAsP/InP multiwell laser heterostructures with active regions having emission wavelengths of 1.3 and 1.55 μm and their radiative characteristics were studied.
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Pis’ma Zh. Tekh. Fiz. 24, 61–67 (November 12, 1998)
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Leshko, A.Y., Lyutetskii, A.V., Murashova, A.V. et al. Multiwell laser heterostructures fabricated by liquid-phase epitaxy. Tech. Phys. Lett. 24, 854–856 (1998). https://doi.org/10.1134/1.1262291
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DOI: https://doi.org/10.1134/1.1262291