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Films of a-Si:H doped with erbium from the metalorganic compound Er(HFA)3*DME, emitting at 1.54 μm

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Abstract

For the first time standard low-temperature (< 300 °C) plasma-enhanced chemical vapor deposition technology has been used to obtain a-Si(Er):H films emitting at 1.54 μm at room temperature. The fluorine-containing metalorganic compound Er(HFA)3*DME, exhibiting enhanced volatility and fairly good thermal stability, was used for the first time as the Er source. The establishment of photoconduction in the synthesized samples indicates that they are of satisfactory electronic quality and potentially useful for developing light-emitting diodes at 1.54 μm.

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Authors and Affiliations

  1. A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg

    V. B. Voronkov, V. G. Golubev, N. I. Gorshkov, A. V. Medvedev, A. B. Pevtsov, D. N. Suglobov & N. A. Feoktistov

  2. “V. G. Khlopin Radium Institute” Scientific-Industrial Organization, St. Petersburg

    V. G. Golubev, N. I. Gorshkov, A. V. Medvedev, A. B. Pevtsov, D. N. Suglobov & N. A. Feoktistov

Authors
  1. V. B. Voronkov
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  2. V. G. Golubev
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  3. N. I. Gorshkov
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  4. A. V. Medvedev
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  5. A. B. Pevtsov
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  6. D. N. Suglobov
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  7. N. A. Feoktistov
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Pis’ma Zh. Tekh. Fiz. 24, 8–13 (July 12, 1998)

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Voronkov, V.B., Golubev, V.G., Gorshkov, N.I. et al. Films of a-Si:H doped with erbium from the metalorganic compound Er(HFA)3*DME, emitting at 1.54 μm. Tech. Phys. Lett. 24, 502–503 (1998). https://doi.org/10.1134/1.1262169

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  • DOI: https://doi.org/10.1134/1.1262169

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