Abstract
SrAl2O4:Eu2+ films were fabricated on the Si substrates by metal–organic solution deposition method and subsequent treatment up to 1100 °C. The phase and microstructure of the obtained films were characterized by DTA-TG, XRD, SEM and AFM. The composition of the film was confirmed by XPS. The luminescence properties of the films were measured by spectrophotometer. The effect of annealing temperature on the structure and luminescence was studied. It showed that the films had the pure monoclinic phase and the depth about 2 µm. Under the excitation of 254 nm, SrAl2O4:Eu2+ films exhibited an intense green emission band peaking at 528 nm, which originates from the 4f–5d transition of the Eu2+ ions. The quenching temperature of the emission is about 400 K. The results indicated that the SrAl2O4:Eu2+ films have good potential for use as a green phosphor for displays and/or white light emitting diodes.
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Acknowledgments
This work is supported financially by the National Science Foundation of China (Grant Nos. 51102158, 51202135 and 51302158), the Science and Technology Develop Project in Shandong Province (Grant No. 2013GGX10203), Natural Science Foundation of Shandong Province (Grant No. ZR2014EMQ004), and Youth Foundation of Shandong Academy of Sciences (Grant Nos. 2013QN011, 2014QN027 and 2014QN028).
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Yang, Y., Liu, B., Zhang, Y. et al. Fabrication of SrAl2O4:Eu2+ films on Si substrates via metal–organic solution. J Mater Sci: Mater Electron 26, 8267–8271 (2015). https://doi.org/10.1007/s10854-015-3490-5
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DOI: https://doi.org/10.1007/s10854-015-3490-5