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High-temperature diode formed by epitaxial GaP layers

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Abstract

The preparation of pure, undoped, high-temperature GaP grown by liquid-phase epitaxy is reported. Results are presented of studies of GaP p-n structures grown at various crystallization initiation temperatures, using the capacitance-voltage (C-V) method and deep-level transient spectroscopy (DLTS). The characteristics of GaP are determined by the low concentration of background impurities and deep-level defects. Measurements of the temperature dependence of the forward branch of the current-voltage characteristic showed that the thermometric characteristic of the diode is linear between −191 and ∼+600 °C.

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Authors and Affiliations

  1. A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg

    M. M. Sobolev & V. G. Nikitin

Authors
  1. M. M. Sobolev
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  2. V. G. Nikitin
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Pis’ma Zh. Tekh. Fiz. 24, 1–7 (May 12, 1998)

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Sobolev, M.M., Nikitin, V.G. High-temperature diode formed by epitaxial GaP layers. Tech. Phys. Lett. 24, 329–331 (1998). https://doi.org/10.1134/1.1262110

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  • DOI: https://doi.org/10.1134/1.1262110

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