Abstract
An investigation was made of a possible method of obtaining thin films of new ZnGa2S4 semiconductors by pulsed laser deposition and quasi-equilibrium deposition from a Knudsen cell. It was established that these films are transparent in the range 0.3–26 μm, their band gap is 3.79 eV, and the refractive index in the region of transparency is 2.19.
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Pis’ma Zh. Tekh. Fiz. 24, 85–87 (March 26, 1998)
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Popovich, N.I., Dovgoshei, N.I. & Kacher, I.É. Preparation of thin films of new ZnGa2S4 wide-gap semiconductors. Tech. Phys. Lett. 24, 242 (1998). https://doi.org/10.1134/1.1262070
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DOI: https://doi.org/10.1134/1.1262070