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Infrared spectroscopy of a silicon surface bombarded by nitrogen ions

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Abstract

Transmission Fourier-transform infrared spectroscopy was used to study the formation of a ripple topology on a silicon surface bombarded by nitrogen ions, together with the formation of silicon nitride, the evolution of its composition and structure. For the first time, an attempt is made to study the evolution of the formation of a ripple topology on the surface of silicon by analyzing the main spectral characteristics (amplitude, position, and profile) of the infrared absorption bands. It is shown that the change in the profile of the characteristic absorption band and the position of its peak correlate with the characteristics of formation of the ripples on the silicon surface. It is demonstrated that infrared transmission spectroscopy can be used to study surface structuring processes for semiconductors bombarded by ions of chemically active elements.

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References

  1. K. Elst and W. Vandervorst, J. Vac. Sci. Technol. A 12, 3205 (1994).

    Article  ADS  Google Scholar 

  2. A. Karen, Y. Nakagawa, M. Hatada et al., Surf. Interface Anal. 23, 506 (1995).

    Article  Google Scholar 

  3. J. J. Vajo, R. E. Doty, and E.-H. Cirlin, J. Vac. Sci. Technol. A 14, 2709 (1996).

    Article  ADS  Google Scholar 

  4. D. W. Moon and K. J. Kim, J. Vac. Sci. Technol. A 14, 2744 (1996).

    Article  ADS  Google Scholar 

  5. K. Wittmaak, J. Vac. Sci. Technol. A 8, 2246 (1990).

    ADS  Google Scholar 

  6. V. K. Smirnov, D. A. Kurbatov, E. V. Potapov, and A. V. Zhokhov, Poverkhnost’ No. 10, 65 (1993).

  7. V. K. Smirnov, S. A. Krivelevich, P. A. Lepshin, and D. S. Kibalov, Neorg. Mater. (1998), in press.

  8. F. A. Cotton and G. Wilkinson, Advanced Inorganic Chemistry, 2nd ed. [Wiley, New York (1966); Mir, Moscow (1969), 592 pp.].

    Google Scholar 

  9. G. Luckovsky, J. Yang, S. S. Chao et al., Phys. Rev. B 28, 3234 (1983).

    ADS  Google Scholar 

  10. Yu. N. Volgin and Yu. I. Ukhanov, Opt. Spektrosk. 38, 727 (1975) [Opt. Spectrosc. 38, 412 (1975)].

    Google Scholar 

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Authors and Affiliations

  1. Institute of Microelectronics, Russian Academy of Sciences, Yaroslavl

    V. I. Bachurin, P. A. Lepshin, V. K. Smirnov & A. B. Churilov

Authors
  1. V. I. Bachurin
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  2. P. A. Lepshin
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  3. V. K. Smirnov
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  4. A. B. Churilov
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Additional information

Pis’ma Zh. Tekh. Fiz. 24, 18–23 (March 26, 1998)

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Bachurin, V.I., Lepshin, P.A., Smirnov, V.K. et al. Infrared spectroscopy of a silicon surface bombarded by nitrogen ions. Tech. Phys. Lett. 24, 214–216 (1998). https://doi.org/10.1134/1.1262058

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  • DOI: https://doi.org/10.1134/1.1262058

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