Skip to main content
SpringerLink
Log in

Enhancement of the characteristics of thin-film electromluminescent structures based on ZnS:Mn films after low-power laser irradiation

  • Published:
Technical Physics Letters Aims and scope Submit manuscript

Abstract

It is shown that short-term exposure of thin-film electroluminescent structures based on ZnS:Mn films to ultraviolet pulses with energy much lower than the threshold energies for laser annealing of ZnS:Mn films can enhance the brightness and efficiency of the electroluminescence, increase the slope of the brightness-voltage characteristics, improve the operating stability, and increase the electrical safety margin of the structures. It is established that the improvement in the properties of structures is caused by the photostimulation of below-threshold defect annealing processes and impurity diffusion, which lead to redistribution of the Mn ions in the ZnS film and reduce the concentration of shallow states which influence the structural characteristics.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. Y. F. Ono, Electroluminescent Displays (World Scientific, Singapore, 1995), p. 187.

    Google Scholar 

  2. Jonson, US Patent No. 4 442 136, published Oct. 1984.

  3. L. I. Veligura, Ya. F. Kononets, and O. A. Ostroukova, Abstracts of International Conference on Luminescence, FIAN, Moscow, 1994, p. 232.

  4. J. E. Nichols, J. J. Devis, and B. C. Covenott, J. Phys. C. Solid. State Phys. 12, 370 (1979).

    Google Scholar 

  5. V. I. Emel’yanov, Izv. Ross. Akad. Nauk, Ser. Fiz. 56(4), 147 (1992).

    Google Scholar 

  6. R. V. Prudnikov, P. K. Kashkarov, and V. Yu. Kashkarov, Vestn. Mosk. Gos. Univ. 36, 61 (1995).

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Institute of Semiconductor Physics, Ukrainian National Academy of Sciences, Kiev

    Ya. F. Kononets

Authors
  1. Ya. F. Kononets
    View author publications

    You can also search for this author in PubMed Google Scholar

Additional information

Pis’ma Zh. Tekh. Fiz. 24, 1–6 (February 26, 1998)

Rights and permissions

Reprints and permissions

About this article

Cite this article

Kononets, Y.F. Enhancement of the characteristics of thin-film electromluminescent structures based on ZnS:Mn films after low-power laser irradiation. Tech. Phys. Lett. 24, 124–126 (1998). https://doi.org/10.1134/1.1262020

Download citation

  • Received:

  • Issue Date:

  • DOI: https://doi.org/10.1134/1.1262020

Keywords

Search

Navigation