Formation of a low-resistivity penetrating metal-Si layer under the action of CO₂ laser radiation

Abstract

Some characteristic features observed as a result of the action of CO₂ laser radiation on a metal-silicon layer are described, especially the formation of a low-resistivity penetrating layer. The assumption is put forward that this low-resistivity penetrating layer forms as a result of the solid-phase dissolution of metal in Si or by diffusion of the metal into defects formed by laser radiation.