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Nonequilibrium processes in Hg1−x CdxTe n +−p junctions in a magnetic field

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Abstract

The results of measurements of the relaxation and current-voltage characteristics of Hg1− x CdxTen +−p junctions in a magnetic field are presented. It is shown that the lifetime of the nonequilibrium electrons in the p-type region undergoes an increase in a magnetic field, which can be associated with the heterogeneous distribution of defects from the junction boundary. The current-voltage characteristics in a magnetic field exhibit suppression of the diffusion component of the current and an increase in the contribution of the generation-recombination channel, as well as the appearance of shunting channels, which are associated with the influence of the surface.

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Authors and Affiliations

  1. I. Franko Drogobych State Pedagogic Institute, Drogobych, Ukraine

    I. S. Virt

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  1. I. S. Virt
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Pis’ma Zh. Tekh. Fiz. 23, 88–94 (October 26, 1997)

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Virt, I.S. Nonequilibrium processes in Hg1−x CdxTe n +−p junctions in a magnetic field. Tech. Phys. Lett. 23, 813–815 (1997). https://doi.org/10.1134/1.1261811

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  • DOI: https://doi.org/10.1134/1.1261811

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