Abstract
A new method is proposed for obtaining nanolayers. The method is based on pulsed cooling of a saturated fluxed melt. The layers obtained were investigated with the aid of photoluminescence. The results show a high quantum yield of luminescence and therefore high quality of the layers grown.
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T. F. Kulyutkina, I. E. Maronchuk, and A. V. Shorokhov, Pis’ma Zh. Tekh. Fiz. 21(20), 1 (1995) [Tech. Phys. Lett. 21, 815 (1995)].
Zh. I. Alferov, V. M. Andreev, A. A. Vodnev et al., Pis’ma Zh. Tekh. Fiz. 12, 1089 (1986) [Sov. Tech. Phys. Lett. 12, 450 (1986].
M. Herman, Semiconductor Superlattices [Russian translation], Mir., Moscow, 1989.
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Pis’ma Zh. Tekh. Fiz. 23, 82–86 (September 12, 1997)
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Maronchuk, I.E., Maronchuk, A.I. & Shorokhov, A.V. GaAs nanolayers obtained by pulsed cooling of a saturated fluxed melt. Tech. Phys. Lett. 23, 692–693 (1997). https://doi.org/10.1134/1.1261658
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DOI: https://doi.org/10.1134/1.1261658