Abstract
The morphology of layers obtained by anodic etching is related to the current-voltage characteristics of the electrolytic cell during the etching. By etching at various points of the current-voltage characteristic one can obtain porous silicon with various structures.
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Pis’ma Zh. Tekh. Fiz. 23, 80–84 (March 26, 1997)
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Buchin, É.Y., Prokaznikov, A.V. Control of the morphology of n-type porous silicon. Tech. Phys. Lett. 23, 244–245 (1997). https://doi.org/10.1134/1.1261644
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DOI: https://doi.org/10.1134/1.1261644