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Effect of ion sputtering on the statistical properties of a surface

  • Surfaces, Electron and Ion Emission
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Abstract

The modification of a gallium arsenide surface during irradiation by heavy cesium ions Cs+ is investigated by measuring the surface height distribution with an atomic force microscope. Both increases and decreases in the rms height σ, an integral parameter of the surface, are observed to occur. It is established that for all experimental samples the roughness of the gallium arsenide surface increases in a 1–100 nm lateral range. Analysis of the structure function yields an estimate of the characteristic lateral dimensions of the surface structures arising during ion etching.

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Authors and Affiliations

  1. A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    A. V. Merkulov

  2. St. Petersburg State Technical University, 195250, St. Petersburg, Russia

    O. A. Merkulova

Authors
  1. A. V. Merkulov
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  2. O. A. Merkulova
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Additional information

Zh. Tekh. Fiz. 69, 107–111 (February 1999)

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Merkulov, A.V., Merkulova, O.A. Effect of ion sputtering on the statistical properties of a surface. Tech. Phys. 44, 230–234 (1999). https://doi.org/10.1134/1.1259290

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  • DOI: https://doi.org/10.1134/1.1259290

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