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Analysis of structural defects in boron-implanted silicon single crystals on the basis of the results of double-and triple-crystal x-ray diffractometry

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Abstract

The structural defects in Si single crystals are analyzed on the basis of diffraction reflection curves and triple-crystal spectra. The relative variation of the lattice period and its distribution as a function of depth are calculated, and the type of defects appearing and the behavior of the implanted impurity in response to high-temperature annealing are determined.

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Authors and Affiliations

  1. Syktyvkar State University, 167001, Syktyvkar, Russia

    A. P. Petrakov, N. A. Tikhonov & S. V. Shilov

Authors
  1. A. P. Petrakov
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  2. N. A. Tikhonov
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  3. S. V. Shilov
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Zh. Tekh. Fiz. 68, 91–96 (June 1998)

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Petrakov, A.P., Tikhonov, N.A. & Shilov, S.V. Analysis of structural defects in boron-implanted silicon single crystals on the basis of the results of double-and triple-crystal x-ray diffractometry. Tech. Phys. 43, 696–700 (1998). https://doi.org/10.1134/1.1259056

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  • DOI: https://doi.org/10.1134/1.1259056

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