Abstract
The influence of electron irradiation on the light-emitting properties of p-and n-type porous silicon prepared by electrochemical etching is investigated. The dose and energy dependences of the electron-stimulated quenching of the photoluminescence (PL) are determined. It is shown that electron treatment of a porous silicon surface followed by prolonged storage in air can be used to stabilize the PL. The excitation of photoluminescence by a UV laser acting on sections of porous silicon samples subjected to preliminary electron treatment is discovered for the first time. The influence of the electron energy and the power of the laser beam on this process is investigated. The results presented are attributed to variation in the number of radiative recombination centers as a result of the dissociation and restoration of hydrogen-containing groups on the pore surface.
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Zh. Tekh. Fiz. 68, 58–63 (March 1998)
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Kostishko, B.M., Orlov, A.M. Influence of successive electron and laser irradiation on the photoluminescence of porous silicon. Tech. Phys. 43, 318–322 (1998). https://doi.org/10.1134/1.1258917
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DOI: https://doi.org/10.1134/1.1258917