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High density 2DEG in III-V semiconductor heterostructures and high-electron-mobility transistors based on them

  • Semiconductor Heterostructures
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Abstract

Situation in high-electron-mobility transistor (HEMT) technology is discussed. The N-AlGaAs/InGaAs/GaAs pseudomorphic HEMT’s are now considered as most advanced for mmwave monolithic circuits, but metamorphic N-InxAl1−x As/InyGa1−y As/InxAl1−x As HEMT’s grown on GaAs substrates are very promising for the future high-frequency devices. High density 2DEG in HEMT’s is analyzed by means of the Hall effect and photoluminescence measurements. Processing technology of the sub-0.25-µm pseudomorphic HEMT’s, metamorphic HEMT’s and their characteristics are also described.

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Authors and Affiliations

  1. Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 103907, Moscow, Russia

    V. G. Mokerov, Yu. V. Fedorov & A. V. Hook

Authors
  1. V. G. Mokerov
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  2. Yu. V. Fedorov
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  3. A. V. Hook
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Additional information

Fiz. Tekh. Poluprovodn. 33, 1064–1065 (September 1999)

This article was published in English in the original Russian journal. Reproduced here with stylistic changes by the Translation Editor.

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Mokerov, V.G., Fedorov, Y.V. & Hook, A.V. High density 2DEG in III-V semiconductor heterostructures and high-electron-mobility transistors based on them. Semiconductors 33, 970–971 (1999). https://doi.org/10.1134/1.1187814

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  • DOI: https://doi.org/10.1134/1.1187814

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