Abstract
The thermal stability and luminescence properties of ZnCdSe/ZnSe quantum-well structures grown by molecular-beam epitaxy are investigated. A comparative analysis is made of the photoluminescence spectra of the structures before and after annealing. In the sample spectra after annealing (at 500 °C) a decrease in the intensity of the exciton luminescence line by more than two orders of magnitude, accompanied by an increase in the intensity of the deep levels, is observed. As a result of annealing at a lower temperature (about 400 °C), a narrowing of the exciton luminescence, accompanied by a shift of the maximum toward longer wavelengths, was detected.
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Fiz. Tekh. Poluprovodn. 31, 296–298 (February 1997)
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Dianov, E.M., Trubenko, P.A., Filimonov, E.É. et al. Effect of thermal annealing on the luminescence properties of ZnCdSe/ZnSe quantum-well structures. Semiconductors 31, 186–188 (1997). https://doi.org/10.1134/1.1187104
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DOI: https://doi.org/10.1134/1.1187104