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Breakdown electroluminescence spectra of silicon carbide p-n junctions

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Abstract

The breakdown electroluminescence spectra of p-n junctions with uniform and microplasma breakdown, which were prepared on SiC-3C crystals, have been investigated. A distinct periodic structure of an oscillatory nature with oscillation periods of 0.1–0.5 eV was observed in the room-temperature emission spectra of individual microplasmas. The amplitude of the bands increases with the period, and at maximum period it exceeds the amplitude of the background radiation. A similar structure was also observed in the spectra of individual microplasmas on SiC-6H. It is assumed that the structure is due to the action of a strong electric field in the region of radiation formation.

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Authors and Affiliations

  1. Kiev Polytechnical Institute, Ukrainian National Academy of Sciences, 252056, Kiev, Ukraine

    M. V. Belous, A. M. Genkin, V. K. Genkina & O. A. Guseva

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  1. M. V. Belous
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  2. A. M. Genkin
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  3. V. K. Genkina
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  4. O. A. Guseva
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Fiz. Tekh. Poluprovodn. 31, 277–280 (February 1997)

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Belous, M.V., Genkin, A.M., Genkina, V.K. et al. Breakdown electroluminescence spectra of silicon carbide p-n junctions. Semiconductors 31, 169–172 (1997). https://doi.org/10.1134/1.1187101

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  • DOI: https://doi.org/10.1134/1.1187101

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