Abstract
The basic features of current flow in the form of microplasma pulses have been confirmed by numerical modeling. It is shown that a microplasma can appear spontaneously in the presence of a local inhomogeneity in the space-charge region of a p-n structure, and the increase in the temperature of the structure as a result of Joule heating leads to microplasma suppression. The kinetics, shape, and duration of the microplasma pulses were studied numerically as a function of the applied voltage and the parameters of the semiconductor structure.
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Fiz. Tekh. Poluprovodn. 31, 250–254 (February 1997)
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Datsko, B.I. Numerical modeling of microplasma instability. Semiconductors 31, 146–149 (1997). https://doi.org/10.1134/1.1187097
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DOI: https://doi.org/10.1134/1.1187097