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Quantum dot injection heterolaser with ultrahigh thermal stability of the threshold current up to 50 °C

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Abstract

Gaseous phase epitaxy from metal organic compounds is used to obtain a low-temperature injection laser with an active region based on In0.5Ga0.5As/GaAs quantum dots. Optimizing the growth conditions and geometric parameters of the structure has made it possible to increase the range of ultrahigh thermal stability in the threshold current (the characteristic temperature is T 0=385 K) up to 50 °C.

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Authors and Affiliations

  1. A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    M. V. Maksimov, N. Yu. Gordeev, S. V. Zaitsev, P. S. Kop’ev, I. V. Kochnev, N. N. Ledentsov, A. V. Lunev, S. S. Ruvimov, A. V. Sakharov, A. F. Tsatsul’nikov, Yu. M. Shernyakov & Zh. I. Alferov

  2. Technische Universität Berling, D-10623, Berling, Germany

    D. Bimberg

Authors
  1. M. V. Maksimov
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  2. N. Yu. Gordeev
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  3. S. V. Zaitsev
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  4. P. S. Kop’ev
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  5. I. V. Kochnev
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  6. N. N. Ledentsov
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  7. A. V. Lunev
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  8. S. S. Ruvimov
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  9. A. V. Sakharov
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  10. A. F. Tsatsul’nikov
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  11. Yu. M. Shernyakov
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  12. Zh. I. Alferov
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  13. D. Bimberg
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Additional information

Fiz. Tekh. Poluprovodn. 31, 226–229 (February 1997)

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Maksimov, M.V., Gordeev, N.Y., Zaitsev, S.V. et al. Quantum dot injection heterolaser with ultrahigh thermal stability of the threshold current up to 50 °C. Semiconductors 31, 124–126 (1997). https://doi.org/10.1134/1.1187093

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  • DOI: https://doi.org/10.1134/1.1187093

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